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Samsung TA-800 Charger Schematic Inquiry

User question

Schematic Samsung TA-800

Artificial Intelligence Response

Direct answer to the question

  • Samsung has never published a component–level schematic (service circuit diagram) for the EP-TA800 “Super-Fast 25 W” USB-C charger; it is treated as proprietary intellectual property.
  • What is available to the public are high-resolution teardowns and the individual IC data sheets, from which a functional block diagram and a near-complete reverse-engineered schematic can be reconstructed.
  • Key primary-side parts: DIODES Inc. GP801LS fly-back PWM + SemiHow HCD70R600 MOSFET.
  • Key secondary-side parts: POTENS PDC6986BZ-5 synchronous-rectifier, DIODES Inc. AP43771 USB-PD/PPS controller, Winning-Team SFTN7422SMP-HAF VBUS switch MOSFET.

Detailed problem analysis

  1. Charger rôle & specifications
    • Model: EP-TA800 / TA-800   • Input: 100-240 V ac, 50/60 Hz, ≤0.7 A
    • PDOs: 5 V @ 3 A | 9 V @ 2.77 A
    • PPS: 3.3–5.9 V @ 3 A | 3.3–11 V @ 2.25 A

  2. Top-level architecture (isolated fly-back, synchronous output)

     (AC) PRIMARY (HV, unsafe) ISOLATION SECONDARY (LV)
    Line ── Fuse ─┬─ NTC ─ EMI-L/C ─ Bridge ─ Bulk-C ──────┬───────────────┬──► SR-MOSFET ─ LC-filter ─► VBUS
    │ │ │
    Neutral ───────┴────────────────────────────────────────┘ Transformer └─► Opto/TL431 ▬▭ feedback
    ▲ | │
    │ └── GP801LS PWM + HCD70R600 MOSFET ◄──┘
    ▼
    USB-PD / PPS controller (AP43771) → VBUS switch (SFTN7422)
    ⇅ CC1/CC2 negotiation to handset
  3. Stage-by-stage explanation
    Primary
    • EMI filter: fuse, NTC inrush, CM choke, X/Y caps.
    • Rectification: GBU-type bridge to ≈325 V dc (on 230 V mains).
    • Bulk storage: 22 µF + 15 µF, 400 V electrolytics laid horizontally to save height.
    • Power switch: GP801LS (integrated HV start-up, 65–130 kHz) drives HCD70R600 (700 V, 600 mΩ) MOSFET.
    • Control: Current-mode PWM with OVP/OTP/OCP; start-up via internal high-voltage regulator, then auxiliary winding.

    Isolation & feedback
    • Flat, planar transformer for slim profile.
    • Everlight optocoupler + TL431 shunt regulator supply precise voltage feedback under USB-PD controller command.

    Secondary
    • Synchronous rectifier: PDC6986BZ-5 replaces Schottky for ≈95 % peak efficiency.
    • Output filter: 600 µF/14 V polymer cap + multiple X7R ceramics for low ESR/ESL.
    • Protocol/MCU: AP43771 runs USB-PD 3.0 w/ PPS; measures V/I, negotiates 20 mV PPS steps, supervises protection.
    • Load switch: SFTN7422SMP-HAF provides OCP/OTP and disconnects VBUS at fault or no load.

  4. Protection layers
    • Primary: fuse, OVP, OCP, hiccup-mode.
    • Isolation: ≥4 mm creepage, reinforced tape on core, Y-cap to return-path ground.
    • Secondary: VBUS OCP (~3.4 A), OVP (~13 V), SCP shut-down, thermal fold-back.

  5. Known failure modes (field data from repair forums)
    • Open start-up resistor → no primary VCC, charger dead.
    • Shorted HCD70R600 → blown fuse, zero output.
    • Dry polymer output cap → high ripple, phone drops out of PPS.
    • Cracked USB-C receptacle pins (especially CC line) → only 5 V legacy charge.


Current information and trends

• 2023-2024 chargers in the same power class migrate to GaN integrated fly-back (PI InnoSwitch3-Pro, Navitas NV6xx) offering higher efficiency and smaller size; Samsung kept Si-MOSFET for cost.
• USB-PD 3.1 (up-to 28 V, 140 W) is emerging; TA-800 is limited to PD 3.0/PPS 11 V. Future Samsung adapters (>45 W) adopt PD 3.1 EPR.
• Industry pushes towards high-density planar transformers and co-packaged SR/PWM to shrink wall-warts below 25 cm³.


Supporting explanations and details

Why synchronous rectification?
\[ \text{P}_{\text{loss}}^{\text{diode}} = I \times VF,\qquad \text{P}{\text{loss}}^{\text{SR}} = I^2 \times R_{DS(on)} \] At 3 A, V_F ≈ 0.45 V ⇒ 1.35 W vs. SR MOSFET R_DS(on) ≈ 8 mΩ ⇒ 0.072 W; ≈19× less heat.

Partial primary schematic (extracted from GP801LS datasheet, values from teardown)

HV_DC ──+──22µ/400V──+─────+─► T pri
| | |
| RCS 0.2Ω|<─ ISENSE
| | |
+──NTC──Fuse─+── HCD70R600 Drain
GP801LS
VCC ◄─ 10µ/50V aux winding
CS │
FB ◄─ opto

Ethical and legal aspects

• The exact Samsung service schematic is copyright-protected; distributing it without permission infringes IP laws.
• Teardowns and reverse-engineered drawings are legal under fair-use in most jurisdictions, but re-publication of Samsung’s original documents is not.
• Working on mains SMPS poses lethal shock risk; always use isolation transformer, discharge bulk cap, follow IEC 60950/62368 safety.


Practical guidelines

Obtaining working documentation

  1. Request “component level service manual” through an authorised Samsung service partner (may require NDA).
  2. Use ChargerLAB / IFixit teardown pictures as a visual net-list; print and overlay your own trace lines.
  3. Pull data sheets: GP801LS, HCD70R600, PDC6986BZ-5, AP43771, TL431, SFTN7422 → connect pins as per PCB photo.

Diagnostic workflow

  1. Primary side cold-ohm tests (bridge, MOSFET, fuse).
  2. Power-up via isolated VARIAC + series lamp, watch VCC (should rise to ≈13 V, then to 7–8 V after start-up).
  3. If VBUS absent but VCC OK, scope drain waveform (≈100 kHz 50 % duty).
  4. Secondary: check SR gate drive (square wave ~sync with primary), measure ripple <50 mV pp at 9 V/1 A load.
  5. Logic: confirm CC1/CC2 voltages (0.55 V default, 1.7 V on 3 A advertisement).

Common component substitutes
• GP801LS ↔ PI InnoSwitch3-CP (if redesigning, not repairing).
• PDC6986BZ-5 ↔ AOZ8661, SRK2001.

Challenges
• Board uses black epoxy “glue-shield” near transformer—must be scraped carefully.
• Horizontal electrolytics are soldered with folded leads; desolder from reverse side.


Possible disclaimers or additional notes

• Re-engineering to produce clone chargers may violate Samsung patents and regional safety certification (UL, CE).
• The PPS algorithm is firmware inside AP43771; behaviour cannot be altered without IC re-programming.


Suggestions for further research

• Study DIODES Inc. reference design “DER888: 33 W PD/PPS charger using GP801LS + AP43771” (public, schematic included).
• Look up IEC 62368-1 testing requirements (touch current, leakage, creepage) for designing compliant replacements.
• Explore open-source USB-PD projects (USB-C-PD-sink/source by Micropendous, USB-PD PHY on STM32G0) to interface with TA-800 for advanced logging.


Brief summary

An official EP-TA800 schematic is not in the public domain, but detailed teardowns and IC application notes let engineers reconstruct the design: a high-frequency fly-back converter (GP801LS + HCD70R600) with synchronous rectification (PDC6986) and a dedicated USB-PD/PPS controller (AP43771). Armed with teardown photos, datasheets, and standard SMPS know-how, you can trace the board, diagnose faults, or adapt similar reference designs—while observing safety protocols and respecting Samsung’s IP rights.

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