Comparing Power N-MOSFET IRF3205 and IGBT SKW30N60 for Negative Rail Switch in Ham Radio

The discussion focuses on selecting an appropriate semiconductor switch for protecting a ham radio by interrupting the negative power supply rail during overvoltage conditions. The original question compares using a power N-channel MOSFET (IRF3205) versus an IGBT (SKW30N60) or a more powerful alternative. The protection goal is to safeguard the radio from overvoltage by opening the negative rail, similar to an SCR crowbar but avoiding fuse and component damage. Responses highlight that IGBTs like the SKW30N60 are better suited for higher voltage and current applications, while the IRF3205 MOSFET is more appropriate for lower voltage scenarios (e.g., 12 V). The SKW30N60 is favored for this use case due to better performance at the required voltages, despite a higher voltage drop in IGBTs at low voltages. Alternatives such as the SKW30N60HS from Infineon were mentioned but noted as out of stock. The discussion also includes considerations about switching voltage thresholds and the practicality of logic-level MOSFETs that switch at 5 V for ease of control.
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