logo elektroda
logo elektroda
X
logo elektroda

H-Bridge Circuit Operation: Why Do Some Transistors Saturate While Others Cut Off?

51 16
ADVERTISEMENT
  • #1 21663922
    wiki Saf
    Anonymous  
  • ADVERTISEMENT
  • #2 21663923
    Peter Evenhuis
    Anonymous  
  • #3 21663924
    Dorin Dragan
    Anonymous  
  • #4 21663925
    Steve Lawson
    Anonymous  
  • ADVERTISEMENT
  • #5 21663926
    Steve Lawson
    Anonymous  
  • ADVERTISEMENT
  • #6 21663927
    Steve Lawson
    Anonymous  
  • #7 21663928
    Jan Faerie
    Anonymous  
  • #8 21663929
    Jan Faerie
    Anonymous  
  • #9 21663930
    Steve Lawson
    Anonymous  
  • #10 21663931
    wiki Saf
    Anonymous  
  • #11 21663932
    wiki Saf
    Anonymous  
  • #12 21663933
    Steve Lawson
    Anonymous  
  • ADVERTISEMENT
  • #13 21663934
    Steve Lawson
    Anonymous  
  • #14 21663935
    wiki Saf
    Anonymous  
  • #15 21663936
    Steve Lawson
    Anonymous  
  • #16 21663937
    Steve Lawson
    Anonymous  
  • #17 21663938
    Steve Lawson
    Anonymous  

Topic summary

The discussion explains the operation of an H-bridge circuit focusing on why some transistors saturate while others cut off. Bipolar junction transistors (BJTs) in the H-bridge act as switches: a transistor saturates (fully on) when the base-emitter voltage exceeds approximately 0.7 V with correct polarity, and cuts off (off) otherwise. The top transistors (PNP) conduct when driven by a positive signal, while the bottom transistors (NPN) conduct when connected to ground. The circuit uses complementary pairs where one transistor in a pair saturates while the other cuts off, controlled by input signals pulling bases high or low through resistors and intermediate transistors. Saturation is desired to minimize power dissipation in the transistor, as partial conduction (active region) causes voltage drop and heat. However, in some H-bridge designs, transistors may not reach full saturation due to voltage limitations at emitter and collector junctions, resulting in a compromise between simplicity and efficiency. The discussion also covers the thermal implications of switching transistors, suggesting that MOSFETs are often preferred for high current applications due to their low on-resistance and better efficiency, while IGBTs are suitable for high voltage scenarios. The importance of consulting datasheets for saturation voltage (Vce(sat)) and power dissipation (Ptot) is emphasized. Additional points include the forward biasing of both emitter-base and collector-base junctions for saturation, and the practical observation that in some circuits, transistors never fully saturate but operate near an equilibrium point. The use of complementary push-pull bipolar transistors is also noted for driving MOSFET gates efficiently, where full saturation is less critical for switching speed.
Summary generated by the language model.
ADVERTISEMENT