logo elektroda
logo elektroda
X

How to Use a High-Side Power MOSFET Switch for Motor Control with TTL Signal?

87 22
ADVERTISEMENT
  • #1 21668077
    Nick Durkin
    Anonymous  
  • ADVERTISEMENT
  • #2 21668078
    Steve Spence
    Anonymous  
  • #3 21668079
    Nick Durkin
    Anonymous  
  • #4 21668080
    Steve Spence
    Anonymous  
  • ADVERTISEMENT
  • #5 21668081
    Nick Durkin
    Anonymous  
  • ADVERTISEMENT
  • #6 21668082
    stephen Van Buskirk
    Anonymous  
  • #7 21668083
    Nick Durkin
    Anonymous  
  • #8 21668084
    Steve Lawson
    Anonymous  
  • #9 21668085
    Nick Durkin
    Anonymous  
  • ADVERTISEMENT
  • #10 21668086
    stephen Van Buskirk
    Anonymous  
  • #11 21668087
    Frank Bushnell
    Anonymous  
  • #12 21668088
    Nick Durkin
    Anonymous  
  • #13 21668089
    Nick Durkin
    Anonymous  
  • #14 21668090
    stephen Van Buskirk
    Anonymous  
  • #15 21668091
    Steve Lawson
    Anonymous  
  • #16 21668092
    stephen Van Buskirk
    Anonymous  
  • #17 21668093
    Steve Lawson
    Anonymous  
  • #18 21668094
    stephen Van Buskirk
    Anonymous  
  • #19 21668095
    Steve Lawson
    Anonymous  
  • #20 21668096
    stephen Van Buskirk
    Anonymous  
  • #21 21668097
    Steve Lawson
    Anonymous  
  • #22 21668098
    Nick Durkin
    Anonymous  
  • #23 21668099
    stephen Van Buskirk
    Anonymous  

Topic summary

The discussion addresses controlling a motor connected to ground using a high-side power MOSFET switch driven by a TTL signal. The user seeks a suitable circuit for switching the positive supply line to the motor, which operates mostly at 12V with currents up to 20-40A, without PWM, just on/off control. It is clarified that a P-channel MOSFET is typically required for high-side switching, but these devices often have higher on-resistance and lower current ratings compared to N-channel MOSFETs. To overcome this, a charge pump or bootstrap circuit can be used to drive an N-channel MOSFET on the high side by providing a gate voltage higher than the supply voltage. The importance of selecting MOSFETs with low R_DS(on) to minimize power dissipation and heat is emphasized, along with the need for adequate heat sinking. Paralleling MOSFETs is discussed as a method to reduce effective resistance but may increase cost and complexity. The use of protective diodes across the motor and relay coils to handle inductive kickback is recommended. Relays are considered as an alternative but have drawbacks such as noise and size. Suggested transistor models for low-side switching include PN2222A and 2N3904. A specific P-channel MOSFET, IXTP140P05T, is mentioned but noted to have significant power dissipation at high currents. The user is encouraged to experiment and learn through trial and error, with caution about inrush currents and stall conditions that can exceed fuse ratings and damage semiconductors.
Summary generated by the language model.
ADVERTISEMENT