I wrote a long and well organised response but it is disappeared

Anyway; I will write it down again briefly
Firstly thanks for your responses Mr.Cuthbert.
I set up some snubbers(based on your explonations)(330pF-1k / 100pF-68pF- 2.7k and some other about these values) and shapes comes out like your simulation results but expense of additional power consumption (as you said before) however much more than I expected( effcy drop) each time resistors heats up too much.I will go on trying new ones to find optimal values but while my main concern is efficiency beside snubber is there any other things that I can try? I want to change my diode. (my diode right now:
http://www.docdroid.net/a13l/diode-bataki.pdf.html) . Which points should I care when selecting diode? , a less capacitance? As you explained there is a resonant circuit leakage ind. + diode capc. , in this case reducing the capacitance will cause a ringing with a high frequency as far as I know. And how will the circuit be effected? in efficiency mean. Some people told me my transformer TTR(1:12) is high but due to some reasons I have to use same transformer. I this case it seems there is nothing to do related to leakage ind. so rather than leakage ind what points I can improve? You mentioned about stray capacitance I don't have any knowledge about it any suggestion or document will be appreciated. By the way I decreased switching freq from 150Khz to 100Khz and efficecncy improved %5-6 (I am not sure but maybe due to mos. drivers). Next days I will set up interleaved topology(till now I have work with single phase) and I will share what will happen. Morever I will add active clamp but according to my knowledge it won't improve the current shape(not overall efficiency). Here is a document that I prepared before to explain the same situation it may clarify some points more (http://www.docdroid.net/a2tx/flayback-primary-current-problem2-.pdf.html)
Thanks again. Good nights