While making a layout, sometimes you need to replace designed components with the ones you already have or ones that are more available to purchase instead of the designed one. It is good to know the equivalents of such troublesome parts of a device to make sure the replacement does not affect the final effect you want to achieve.
MPF102 is a N-channel RF amplifier used for electronic switching applications. In order to find a satisfying replacement for it, we should know what we are looking for. The best way is to read the datasheet. Below there are some features of this amplifier described in the datasheet, which should be considered when searching for an adequate equivalent:
Maximum ratings beyond which we can experience damage of the device:
- Drain-Gate Voltage: 25V,
- Gate-Source Voltage: -25V,
- Forward Gate Current: 10mA,
- Operating and Storage Junction Temperature Range: -55 to 155 degrees Celsius
Electrical characteristics:
- Off Characteristics:
- Gate-Source Breakdown Voltage: min. -25V,
- Gate Reverse Current: max. -2nA,
- Gate-Source Cutoff Voltage: max. -8V,
- Gate-Source Voltage: min. -0.5V, max. -7.5V
- On Characteristics:
- Zero-Gate Voltage Drain Current: min. 2mA, max. 20mA,
- Forward Transconductance: min. 2000uS, max. 7500uS
- Small Signal Characteristics
- Common-Source Input Capacitance: max. 7pF,
- Common-Source Reverse Transfer Capacitance: 3pF
Thermal characteristics
- Total Device Dissipation: max. 350mW,
- Derate above 25 degrees Celsius: max. 2.8 mW/degree Celsius,
- Thermal Resistance, Junction to Case: max. 125 degree Celsius/W,
- Thermal Resistance, Junction to Ambient: max. 357 degree Celsius/W
Package dimensions (expressed in mm):
Sometimes the equivalent does not cause worse operation of a device, but makes it even better. To determine which replacement will improve your design, you have to define goals you want to achieve by using it, and then compare information about some components you may apply, taking into account their features which are important in a particular case.
Below there are some groups of possible equivalents:
J113, J201, J310,
2N5457, 2N3819,
BF244, BF245A, BF245B, BF245C,
2SA564
MPF102 is a N-channel RF amplifier used for electronic switching applications. In order to find a satisfying replacement for it, we should know what we are looking for. The best way is to read the datasheet. Below there are some features of this amplifier described in the datasheet, which should be considered when searching for an adequate equivalent:
Maximum ratings beyond which we can experience damage of the device:
- Drain-Gate Voltage: 25V,
- Gate-Source Voltage: -25V,
- Forward Gate Current: 10mA,
- Operating and Storage Junction Temperature Range: -55 to 155 degrees Celsius
Electrical characteristics:
- Off Characteristics:
- Gate-Source Breakdown Voltage: min. -25V,
- Gate Reverse Current: max. -2nA,
- Gate-Source Cutoff Voltage: max. -8V,
- Gate-Source Voltage: min. -0.5V, max. -7.5V
- On Characteristics:
- Zero-Gate Voltage Drain Current: min. 2mA, max. 20mA,
- Forward Transconductance: min. 2000uS, max. 7500uS
- Small Signal Characteristics
- Common-Source Input Capacitance: max. 7pF,
- Common-Source Reverse Transfer Capacitance: 3pF
Thermal characteristics
- Total Device Dissipation: max. 350mW,
- Derate above 25 degrees Celsius: max. 2.8 mW/degree Celsius,
- Thermal Resistance, Junction to Case: max. 125 degree Celsius/W,
- Thermal Resistance, Junction to Ambient: max. 357 degree Celsius/W
Package dimensions (expressed in mm):

Sometimes the equivalent does not cause worse operation of a device, but makes it even better. To determine which replacement will improve your design, you have to define goals you want to achieve by using it, and then compare information about some components you may apply, taking into account their features which are important in a particular case.
Below there are some groups of possible equivalents:
J113, J201, J310,
2N5457, 2N3819,
BF244, BF245A, BF245B, BF245C,
2SA564