How to Calculate W and L (Width and Length) Parameters in CMOS Circuit Design?

The discussion centers on understanding how to calculate the width (W) and length (L) parameters of MOSFET transistors in CMOS circuit design. The original question highlights difficulty in determining these values, especially when analyzing circuits such as comparators using simulation tools like Mentor Graphics and LTspice, where example values like L = 1µm and W = 75.59µm are given without clear derivation. Responses clarify that W and L refer to the physical channel width and length of MOSFET devices, fundamental to transistor operation and performance. However, no explicit formula for calculating W and L is provided, as these parameters are typically set based on design requirements, process technology constraints, and device characteristics rather than calculated from a simple formula. Suggestions include consulting datasheets, understanding process design rules, and using specialized nanofabrication equipment (e.g., Focused Ion Beam (FIB), Scanning Tunneling Microscope (STM), Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM), Atomic Force Microscope (AFM), Near-field Scanning Optical Microscope (NSOM)) for physical measurement or verification. The discussion also touches on the importance of clarifying the question and understanding the context of W and L in CMOS design rather than confusing them with other parameters like power or inductance.
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