SiC MOSFET 650V Tested at 1000V—Why No Failure or Breakdown Observed?

Hello
I am experimenting with SiC MOSFETs.
I'm testing a 650V MOSFET, but I wanted to try it out at 1000V for the sake of experimenting.
Why does the attached diagram work perfectly, at 1000 V, instead of burning and destroying itself?
Thank you all.

John

Hello
The datasheets specify 650V for a maximum Vds breakdown voltage.
Therefore you have to check the voltage between the Drain and Source terminals with a tester.
In your scheme the current voltage Vds (ON) is only 0.423 V. The power source, in theory, can also be 10000 Volts, the important thing is that the voltage between the Drain and the Source does not exceed 650 V.
Greetings
Giovanni

I am not certain what is happening here, there is no mention of a specific part. Is it real or just in spice.
In spice, the voltage won't matter generally, since the model normally won't take many of the maximum ratings into account.
In a real world device, when off, the full voltage of the supply appears across the device, minus the voltage in the load resistor times the leakage current (so small) and the maximum breakdown voltage is easily exceeded. Breakdown may not happen immediately, but it will eventually over stress it. I believe that the data sheet Vds may be around 80% of the true maximum to allow for things like inductive switching transients (but don't quote me on that) Driving these things is difficult, a lot of gate current is needed during Vgs transitions, you really need dedicated gate drivers, or slow turn on and turn off may also over stress them.
As Giovanni said, when on, Vds should be low.
Cheers,
Richard