OK. I work in a lab and I am being asked to parameterize a P-Channel MOSFET (3N190). I understand most of what I need to do and have ideas on most of what I don't, but there are 2 breakdown voltages listed that I am to validate, and I don't understand them both.
The breakdown voltage BVdss is, as I understand it, the drain-source breakdown voltage withy Vgs = 0 (gate shorted to the source). So, to test this, I will short the gat to the source which will be grounded (negative pole of my DC power source) and apply poistive voltageto the drain until I see the breakdown. There will of course be current limiting resistors and other protection schemes, but that is the general idea - again, as I understand it.
The other one (BVsds), I don't get. I can't find a definition for it anywhere, so I don't really understadn what to do. I suspect that it is the same thing as the BVdss only in reverse and with the gate shorted to the drain instead of the source as it is in the previous one.
Is this correct? Have I completely missed the boat?
Any assistance will be gladly accepted. Thanks for the help.
The breakdown voltage BVdss is, as I understand it, the drain-source breakdown voltage withy Vgs = 0 (gate shorted to the source). So, to test this, I will short the gat to the source which will be grounded (negative pole of my DC power source) and apply poistive voltageto the drain until I see the breakdown. There will of course be current limiting resistors and other protection schemes, but that is the general idea - again, as I understand it.
The other one (BVsds), I don't get. I can't find a definition for it anywhere, so I don't really understadn what to do. I suspect that it is the same thing as the BVdss only in reverse and with the gate shorted to the drain instead of the source as it is in the previous one.
Is this correct? Have I completely missed the boat?
Any assistance will be gladly accepted. Thanks for the help.
