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Estimating Transistor and MOSFET Temperatures in Circuit Simulation for General Analysis

12 8
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  • #1 21685922
    John Curtin
    Anonymous  
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  • #2 21685923
    David Ashton
    Anonymous  
  • #3 21685924
    Richard Gabric
    Anonymous  
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  • #5 21685926
    John Curtin
    Anonymous  
  • #6 21685927
    orlandpol
    Anonymous  
  • #7 21685928
    wahise6
    Anonymous  
  • #8 21685929
    anu sree
    Anonymous  
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  • #9 21685930
    Keonte45
    Anonymous  

Topic summary

Estimating transistor and MOSFET temperatures in circuit simulations involves calculating power dissipation within the components using tools like LTSpice, which can compute power generated by dissipative elements in free air. However, temperature rise is influenced by additional factors beyond power dissipation, including PCB layout, heat transfer through the board and enclosure, ambient temperature, airflow, and component proximity. Accurate temperature estimation requires considering thermal interactions on the PCB and the environment, but for general analysis, focusing on power dissipation of high-power devices provides a useful approximation. Components related to temperature sensing, such as thermocouples, extension wires, connectors, insulating beads, and protective tubes, are also relevant in thermal management and measurement contexts.
Summary generated by the language model.
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