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How to Design a Transistor Circuit to Pulse MOSFET Gate from 12V to 24V?

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Best answers

How can I drive a MOSFET gate from a 12 V source to a 24 V pulse for a high-side switch?

Use a dedicated high-side MOSFET gate-driver/charge-pump circuit instead of a discrete transistor pulser; an IR2112 or IR2117 bootstrap driver was suggested for this job [#21660907][#21660908][#21660916] The driver should use bootstrap operation with two diodes and two capacitors, and its gate-drive supply range is about 10–20 V [#21660907][#21660908] One reply points to the IRF application note for a buck converter with a bootstrap high-side gate driver as the correct reference design [#21660914][#21660916] Another practical fix was to increase the bootstrap capacitor to greater than 0.47 µF when the MOSFET was not turning off properly [#21660922] A later test report said that increasing the bootstrap capacitance and shortening the PWM duty cycle improved operation and made the PMA much easier to spin [#21660923] If you still want a fully discrete approach, the thread notes that it is possible but adds complexity and headaches [#21660907]
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  • #1 21660906
    Lauri Koponen
    Anonymous  
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  • #2 21660907
    Earl Albin
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  • #3 21660908
    Mark Harrington
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  • #4 21660909
    DAVID CUTHBERT
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  • #5 21660910
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  • #7 21660912
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  • #8 21660913
    Earl Albin
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  • #9 21660914
    Lauri Koponen
    Anonymous  
  • #10 21660915
    Earl Albin
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  • #11 21660916
    Lauri Koponen
    Anonymous  
  • #12 21660917
    Lauri Koponen
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    DAVID CUTHBERT
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    Mark Harrington
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    Lauri Koponen
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Topic summary

✨ The discussion focuses on designing a transistor circuit to pulse a MOSFET gate voltage from 12V to 24V, with the MOSFET source at 12V and the gate requiring a higher voltage drive. Key solutions include using a high-side driver with a bootstrap charge pump, which simplifies the design compared to discrete components. The IR2112 and IR2117 gate driver ICs from International Rectifier are recommended for their floating channel bootstrap operation, wide voltage tolerance, and undervoltage lockout features. Practical issues addressed include ensuring proper gate drive voltage below threshold levels, avoiding shoot-through in transistor drivers, and managing switching frequency limitations due to heating. Additional circuit modifications involve resistor-diode networks and PNP transistors to introduce dead-time and prevent gate voltage during off cycles, reducing EMI and power losses. Testing challenges with oscilloscope grounding and safe measurement practices are discussed. Application notes from International Rectifier and Fairchild Semiconductor provide design guidance, including increasing bootstrap capacitor values to improve performance. Experimental results show improved MOSFET switching and load driving using a 555 timer PWM input with adjusted duty cycles, enabling manual operation of a permanent magnet alternator (PMA) and illumination of resistive loads. Future steps include controlling duty cycle relative to PMA RPM and powering the driver ICs from the battery or PMA output.
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FAQ

TL;DR: Use a bootstrap high‑side MOSFET driver (e.g., IR2112/IR2117); "use a custom MOSFET driver such as an IR2112." Typical gate‑drive supply is 10–20 V. [Elektroda, Mark Harrington, post #21660908]

Why it matters: This fixes "how do I drive a high‑side MOSFET from 12 V to 24 V?" safely, for builders of buck converters and PMA chargers.

Quick Facts

How do I pulse a MOSFET gate from 12 V to 24 V on the high side?

Use a high‑side driver IC with a bootstrap supply. The driver’s HO pin rides on the switch node and charges a bootstrap capacitor through a diode, lifting the gate above the source during turn‑on. Devices like IR2112/IR2117 are designed for this and include UVLO and level shifting. Keep the bootstrap loop tight and place the cap close to VB/Vs pins. [IR AN-978]

What is a bootstrap high‑side driver, in simple terms?

It is a MOSFET gate driver that uses a small diode‑capacitor “bootstrap” to create a temporary voltage higher than the MOSFET source. That extra headroom turns on an N‑channel MOSFET on the high side. See the buck chopper example using IR2117 for the block‑level view. [USNA EE320 Gate Driver Supplement]

Do I need a charge pump, or can my PWM handle it?

You can use a driver with a built‑in charge pump or bootstrap and feed it your PWM. As one expert put it, "Using a charge pump is the right thing to do." If your PWM already exists, pair it with a proper high‑side driver and skip discrete charge‑pump experiments. [Elektroda, Earl Albin, post #21660907]

My high‑side MOSFET turns on during the OFF cycle—what’s wrong?

Likely causes include insufficient gate discharge, dv/dt coupling, or too small a bootstrap capacitor. Add a gate resistor‑diode network to slow turn‑on and speed turn‑off, inserting dead‑time. A small PNP can clamp the gate to ground during OFF for certainty. "This shuts off the FET completely." [Elektroda, Mark Harrington, post #21660921]

How large should the bootstrap capacitor be?

Size it to cover gate charge, driver consumption, and leakage. A practical fix from the field is increasing Cboot to ≥0.47 µF, which cures dropout and OFF‑state misbehavior in many cases. Place it close, use low‑ESR/ESL parts, and keep traces short. [IR AN-978]

What gate voltage should I target for ON and reliable OFF?

Drive the gate high within the driver’s 10–20 V range for strong ON. Ensure the gate falls well below threshold for OFF; an expert warns the MOSFET must be pulled under about 3 V rather than left near 12 V. Use proper pull‑downs and discharge paths. [Elektroda, Earl Albin, post #21660913]

How do I probe this safely with an oscilloscope?

If the three‑phase Y center or battery negative is earth‑referenced, connect the probe ground there. Otherwise, establish a single system ground point. Some float the scope by lifting the ground pin, but that carries risk. Keep ground leads short to reduce ringing. [Elektroda, DAVID CUTHBERT, post #21660918]

Is a P‑channel MOSFET an option for the high side here?

Yes. A simple driver works if you switch to a P‑channel MOSFET. The gate then pulls down to turn ON and releases to turn OFF. This can simplify level shifting, but conduction losses are higher than with an N‑channel of similar size. [Elektroda, DAVID CUTHBERT, post #21660909]

How can I add dead‑time and cut reverse‑recovery spikes?

Use a series gate resistor for turn‑on and a parallel diode to bypass it on turn‑off. This delays turn‑on without slowing turn‑off, reducing current spikes during diode reverse‑recovery. It also lowers EMI and switching losses. [Fairchild AN-6076]

Why does a simple NPN/PNP totem driver heat up and limit frequency?

That classic push‑pull has shoot‑through during transitions. At 24 V it can heat the pair and cap switching near 100 kHz. Add proper dead‑time, or use a dedicated MOSFET driver with built‑in control and fast edges. [Elektroda, Earl Albin, post #21660913]

Three‑step: wiring an IR2117 for a buck converter high side

  1. Place the bootstrap diode from VCC to VB and the bootstrap capacitor from VB to VS, close to the IC.
  2. Connect HO to the MOSFET gate, VS to the MOSFET source/switch node, and LO unused for high‑side‑only.
  3. Feed PWM into IN; tie COM to logic ground and decouple VCC well. [USNA EE320 Gate Driver Supplement]

What is a charge pump?

A charge pump is a switch‑capacitor DC/DC circuit that creates a higher or inverted voltage without an inductor. In gate drivers, it maintains gate headroom for long on‑times when bootstrap refresh is limited. [“Charge pump”]

Will tweaking PWM duty help a hand‑spun PMA start lighting a load?

Yes. In tests, inverting to get about 20% high at the driver eased spinning and lit a 12 V/50 W lamp. Lower duty reduced torque drag from the buck stage during startup and improved momentum. [Elektroda, Lauri Koponen, post #21660923]

How should I power the control electronics when the PMA varies 0–60 V?

Use a regulated VCC for logic. A small Zener‑based supply can run an oscillator for bring‑up, but a proper buck or LDO from the battery is better for stability and UVLO margins on the driver IC. [Elektroda, Lauri Koponen, post #21660917]

What high‑voltage headroom do IR211x drivers offer for floating channels?

IR211x devices are built for high‑side operation with large bus voltages. One referenced driver family specifies a floating channel “fully operational to +600 V,” giving ample margin in automotive and industrial bucks. [Elektroda, Mark Harrington, post #21660908]
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