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Choosing Vgs and Driver for SI2304DS MOSFET in 12V Boost Converter at 0.4A/0.2A

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  • #1 21662086
    Zied Saad
    Anonymous  
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  • #2 21662087
    Calinoaia Valentin
    Anonymous  
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  • #3 21662088
    Zied Saad
    Anonymous  
  • #4 21662089
    Todd Hayden
    Anonymous  
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  • #5 21662090
    Kevin Parmenter
    Anonymous  
  • #6 21662091
    Zied Saad
    Anonymous  
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  • #7 21662092
    Lauri Koponen
    Anonymous  
  • #8 21662093
    Zied Saad
    Anonymous  

Topic summary

The discussion focuses on selecting the appropriate gate-source voltage (Vgs) and determining the necessity of a MOSFET driver for a 12V non-isolated, non-regulated boost converter using the SI2304DS MOSFET with load currents of 0.2A to 0.4A and an input voltage of 2.75V. It is emphasized that in switching applications like boost converters, the MOSFET operates as a switch rather than in its active region, so the key requirement is ensuring the gate drive voltage fully enhances the MOSFET to minimize conduction losses. Since the MOSFET source is at ground potential, driving the gate is simplified. The use of a MOSFET driver depends on the switching frequency and desired efficiency; at 1 MHz switching frequency, a driver may be necessary to achieve fast gate transitions and reduce switching losses, but it is not always mandatory. Additional design considerations include selecting switching frequency, output voltage, and core material for inductors if isolation is involved. Resources such as Ridley Engineering’s design center provide software tools and design guidance for DC-DC converters.
Summary generated by the language model.
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