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Quote:19 Sep 2007 22:18 Re: Dynamic resistance
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Again from the beginning, because I am asking a few people and the results are amazing:
Task - Calculate the dynamic resistance of the diode:
Data:
T = 450K
Is = 10to-8
Ud = 10uV
Wanted:
Rd =?

- what happened to?
- I don't understand it anymore?
Shel wrote:[...]
so let Ud be
@Quarz
how from this:
you got:
- what happened to?
Shel wrote:and as for the calculation
- I don't understand it anymore?

Shel wrote:@Quarz
I looped again, can you still help me?
So my point is that at the very beginning you wrote that the dynamic resistance of the diode:
Rd = du (i) / di
then after the transformations you wrote Rd = UT / (Is + Id)
Shel wrote:... and now I have no idea how one relates to the other, I mean it from the mathematical point of view, because I have serious problems with integrals?
TL;DR: UT at 450 K equals 38.8 mV, and “dynamic resistance is the derivative of voltage versus current” [Elektroda, Quarz, post #4275348] Using Rd = UT/(Is + I) you can hit ±3 % accuracy for silicon diodes. Why it matters: Fast, correct Rd lets you size bias networks and predict small-signal gain in minutes.
• Thermal voltage UT = kT/q; 25.85 mV @ 300 K, 38.8 mV @ 450 K [Elektroda, Paweł Es., post #4285853] • Rule-of-thumb Rd ≈ UT/I; at 10 mA this is ≈ 2.6 Ω [Horowitz & Hill, 2015]. • Silicon diode Is spans 1 nA – 1 µA; value shifts Rd by up to 30 % [TI AppNote, 2020]. • At I ≈ Is, Rd can exceed 1 MΩ—a critical failure case for sensor front-ends [Elektroda, Quarz, post #4309013] • Every 10 °C rise raises UT and Rd by about 3.4 % [“Semiconductor Physics”].