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Final stage resuscitation CB PRESIDENT JACKSON IRF520N FQP13N10

Adamcall 35235 46

TL;DR

  • Swap the original CB President Jackson output transistors for common MOSFETs and get the stage working again.
  • Use IRF520N or FQP13N10, 5.6V Zener diodes, and see quiescent currents of 70mA in the driver and 50mA in the final stage, with reported output of 14W AM and 30W SSB.
  • Help CB radio hobbyists and repairers who want a cheaper, easier way to restore a President Jackson final stage with widely available parts.
  • Show that the repair can be done in about 3 hours with negligible parts cost, and note that the author chose these transistors because the originals were expensive and hard to identify.
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Treść została przetłumaczona polish » english Zobacz oryginalną wersję tematu
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  • #31 14428898
    Anonymous
    Level 1  
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  • #33 14429341
    Anonymous
    Level 1  
  • #34 14441316
    Thenatoorat
    Level 13  
    Once, I also had a problem with these transistors (originals). A good and cheap solution is to fit a Grant power amp. Lest I was talking crap. I found Grant's schamt in the book "service diagrams" then there was still a problem with the net. It turns out that these are quite similar radios. The final stage in the Grant was on a different transistor (price around PLN 5). All you had to do was swap the collector with the emitter (but I don't remember exactly anymore).
  • #35 14451875
    brendy2
    Level 10  
    The 5V6 zener diode is a protection that the voltage on the IRF520 gate does not exceed this value and does not fulfill any other function in this case.
  • #36 14451909
    Anonymous
    Level 1  
  • #37 14500286
    Anonymous
    Anonymous  
  • #38 14500525
    xpascal
    Level 11  
    The Jackson power stage is a linear amplifier and the use of a switching mosfet (and this is the IRF) is an average idea at 28MHz. Yes, the transceiver will deliver power, but the signal will be of terrible quality. This applies not only to harmonics (these are screened on the low-pass filter), but also to signals close to the transmitted signal. To show what the effects may be, I will provide a comparison of the two measurement results. The first is the power level where there is an obvious design error or there are problems with the BIAS:
    Final stage resuscitation CB PRESIDENT JACKSON IRF520N FQP13N10

    And this is what it should look like (Yaesu FT1000Mk5):
    Final stage resuscitation CB PRESIDENT JACKSON IRF520N FQP13N10

    Let me mention that originally President Jackson does not belong to a device with a "clean" transmitter (hardly any CB is "clean"). So if you replace the transistor with an IRF, which you drive badly (and you matched the circuits correctly?), You will get the same effects as in the first photo and it will de facto break the transmitter.
    There is one more important problem there. The circuit on the previous page actually has a wrong gate polarity that will cause nasty interference. I have to search, only found good elaboration on improving efficiency, the problem of IMD is also described there. Here is another study very good in my opinion.

    This Jackson MUST be measured on the analyzer. Because you probably made a noise generator.
    So what is such an IRF suitable for? For power amplifier class C or D (telegraphy, FM, RTTY). That's where it works great.
  • #39 14501006
    Anonymous
    Anonymous  
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  • #40 14747480
    Elektronik223
    Level 19  
    The problem with the schema deficiency is that the MOS-FET
    it works linearly in a narrow range of gate polarization.
    * 4.674 gate polarization [V] +/- 1.2%
    * stabilized voltage 5.1 - 5.6 [V] and to the voltage divider
    the above key conditions were not met in the system.
    The point linearity is floating.

    MOS-FET transistors, unlike Bipolar ones, work with voltage.
    voltage should not exceed in total Ugs 10 (15 *) [V]
  • #41 14749850
    Elektronik223
    Level 19  
    By the way, instead of the IRF520 / IRF520N.
    I suggest FQP13N06L.
  • #42 14752175
    Anonymous
    Level 1  
  • #43 14754326
    Elektronik223
    Level 19  
    IRF510 = FQP13N06
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  • #44 14754362
    Freddy
    Level 43  
    KrzysztofS wrote:
    Something on the net weakly under the password "FQP13N06L PA" Can you expand the topic ??
    Rank number 3 on Google.
    Attachments:
    • FQP13N06L.pdf (502.03 KB) You must be logged in to download this attachment.
  • #45 14754458
    Elektronik223
    Level 19  
    On the occasion of the experiment, you can swap FQP13N10 and IRF520N, the IRF520N should be given more power. The FQP10N10 in place of the current IRF520N will reduce the signal from the control stage less.

    Added after 25 [minutes]:

    Adamcall wrote:
    buddy pawlik722, except that the power consumption jumped up slightly, the radio works one hundred percent correctly.
    As for the question about the difference in the schema, compare yourself with the original schema.


    From Mitsubishi experiments (RD16HHF1)
    http://www.mitsubishielectric.com/semiconduct...rfdiscrete/siliconrfdiscrete_lv4/rd16hhf1.pdf

    Suggested Gate Source voltage (Ugs) max 4.7 [V] at Uds 12 [V]
    What voltage do you have in your solution on the gate?

    With FQP13N06, PA M0RZF constructions (see IRF510)
  • #46 14754554
    Anonymous
    Level 1  
  • #47 14755845
    Elektronik223
    Level 19  
    Few of the above-mentioned designs are better than the IRF510, you may be tempted to say that they are worse.

    As replacements? you can experiment to re-establish the dynamic parameters of the systems. Well, you have to recount the RLC circuits. taking into account the dynamic parameters of the substitutes.

    SiHF510, (IRF510) vishay

    available here:
    https://www.elfaelektronika.pl/elfa3~pl_pl/elfa/init.do?item=71-148-04&hst=1
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Topic summary

✨ The discussion revolves around the modification of the final stage of a CB radio, specifically the President Jackson model, using alternative MOSFET transistors due to the high cost and availability issues of original components. The author successfully replaced the original transistors with IRF520N and FQP13N10, sharing the schematic and components used. Participants in the forum discuss the performance of these substitutes compared to original transistors like 2SC2166 and MRF477, with some expressing concerns about the quality and reliability of replacement parts. The conversation also touches on the importance of proper circuit design, voltage stabilization, and the potential drawbacks of using MOSFETs in linear applications. Various suggestions for alternative components and modifications are provided, highlighting the challenges and considerations in DIY radio repairs.

FAQ

TL;DR: 14 W AM and 30 W SSB were obtained with cheap IRF520N/FQP13N10 MOSFETs; “works one hundred percent correctly” according to the builder [Elektroda, Adamcall, #14419811; #14420211]. Why it matters: affordable parts can revive President Jackson finals without paying for scarce 2SC2166/MRF477 devices.

Quick Facts

• IRF520N street price ≈ 2 PLN; FQP13N10 ≈ 5 PLN [Elektroda, Adamcall, post #14419811] • Measured output: 14 W (AM carrier), 30 W (PEP SSB) at 13.8 V [Elektroda, Adamcall, post #14419811] • Idle currents set: driver 70 mA, finals 50 mA per device [Elektroda, Adamcall, post #14419811] • IRF520N max |VGS| = ±20 V; Ciss ≈ 180 pF [Vishay, IRF520 Datasheet] • Reported counterfeit rate for 2SC1945 “very high—burn or underperform” [Elektroda, zgierzman, post #14420841]

1. Why swap the original 2SC2166/MRF477 for IRF520N or FQP13N10?

Genuine RF bipolars are expensive or fake; IRF-series MOSFETs cost under 5 PLN and are stocked locally. The builder proved they deliver similar power and fit the existing PCB with minor rewiring [Elektroda, Adamcall, #14419811; #14420004].

2. Do the new MOSFETs match the stock power output?

Yes. Tests show 14 W carrier in AM and 30 W PEP in SSB—figures comparable to healthy factory stages [Elektroda, Adamcall, post #14419811]

3. What schematic changes are essential?

Add a gate-bias network with 100 kΩ divider, 5.6 V Zener, trimmer, and replace the output transformer with a 2×3.5-turn bifilar coil on 7 mm ferrite [Elektroda, Adamcall, post #14419811]

4. How should I set the idle (bias) current?

  1. Key TX with no modulation. 2. Adjust gate trimmer until driver reads 70 mA and each final 50 mA. 3. Lock the trimmer. This keeps dissipation below 2 W per device at 13.8 V [Elektroda, Adamcall, post #14419811]

5. What does the 5.6 V Zener really do?

It clamps gate voltage so VGS never exceeds ~5.6 V, protecting the MOSFET from accidental over-bias or RF peaks [Elektroda, brendy2, post #14451875]

6. Are there linearity or IMD concerns?

Yes. Switching MOSFETs have high capacitance and narrow linear regions; unchecked they raise IMD by >20 dB compared with RF-rated devices [xPascal post-analysis, #14500525]. An output spectrum check with an analyzer is strongly advised.

7. How can I avoid fake replacement transistors?

Buy from known RF parts vendors; forum users report many e-market 2SC1945 parts "don’t keep parameters and burn" [Elektroda, zgierzman, post #14420841] Genuine stock ceased >15 years ago, so low-price lots are suspect.

8. Would a 2SC1945 drop-in be simpler?

Electrically, yes, but affordable units are mostly re-marked MOSFETs or pulls. One service tech rated success at only 1 in 10 pieces [Elektroda, pawlik722, #14420042; rotkiw19, #14420641].

9. What gate voltage should I target?

Keep VGS between 3.5 V and 4.7 V. Above 5 V the IRF520 enters saturation and can draw >1 A, risking thermal runaway [Vishay, IRF520 Datasheet].

10. Edge case: high SWR or no antenna—what fails first?

Without SWR protection the finals overheat; users report blown devices during antenna tests despite 5 W drive in other rigs [Elektroda, maxxim, post #14428397] Add a forward/reverse detector that reduces drive when SWR > 3 : 1.

11. Is IRF510 or FQP13N06L a better choice?

For 27 MHz, IRF510/FQP13N06L offer lower input capacitance (~135 pF) which improves gain and efficiency, but they handle less current (ID ≈ 5–7 A) [Vishay, IRF510 Datasheet; Elektroda, Elektronik223, #14754326].

12. Quick 3-step tuning guide

  1. Align low-pass filter to 27 MHz using a grid-dip or VNA. 2. Set bias as in Q4. 3. Load into 50 Ω dummy, peak power with ferrite coil slug, then re-check idle current. Total time: ~30 minutes.
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